Ir Fet



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  2. Ir Future Tense
  3. IRHMS597160 Electrical Characteristics

Infineon's OptiMOS™ N-channel power MOSFETs were developed to increase efficiency, power density and cost-effectiveness. Designed for high-performance applications and optimized for high switching frequencies, OptiMOS™ products offer the industry's best figure of merit.

Now complemented by StrongIRFET™ and StrongIRFET™ 2 N-channel MOSFETs, this extended portfolio creates a truly compelling combination. StrongIRFET™ and StrongIRFET™ 2 MOSFETs add robust design and excellent price/performance to the best-in-class technology of OptiMOS™ MOSFETs. Both product families meet the highest quality and performance demands.

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A pioneer in power electronics since 1947, IR HiRel is a leader in high-reliability, radiation-hardened (rad hard) power conversion and RF solutions for extreme environments, such as those found in space, national security programs, and other industries. Our design, operations and quality systems meet and exceed military standards. Infineon's OptiMOS™ N-channel power MOSFETs were developed to increase efficiency, power density and cost-effectiveness. Designed for high-performance applications and optimized for high switching frequencies, OptiMOS™ products offer the industry's best figure of merit.

Ir Mosfet

  • IR MOSFET-StrongIRFET™ IRF300P226 Table 2 Maximum ratings (at TJ=25°C, unless otherwise specified) Parameter Symbol Values Unit Continuous Drain Current ID 100 Continuous Drain Current ID 71 A Pulsed Drain Current IDM 375 Maximum Power Dissipation PD 556 W Linear Derating Factor 3.7 W/°C.
  • Bridgold 20pcs IRFZ44N IRFZ44 N-Channel MOSFET Transistor, International Rectifier Power 49 A 55 V,3-Pin Todiys New 15Pcs for 8721 IRLB8721PBF 30V 62A TO-220 N-Channel Power Mosfet.
Hi-Rel Synchronous Rectifier MOSFETs

IR offers a comprehensive portfolio of High Reliability synchronous rectifier MOSFETs for harsh environments.

Ir Future Tense

Ir Fet

Newest Parts

IRHMS597160 Electrical Characteristics

  • 60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package

  • 30V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package

  • 30V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package Nvidia geforce gt 540m for mac.

Featured Product

Quality Documents

Quality Conformance Testing

Unlike standard commercial products, HiRel products must be submitted to various levels of quality conformance testing to ensure that the products are capable of performing to specifications in the often harsh environments of military and space applications. Both the United States and European community have each developed specifications that detail the sequence of quality conformance testing.

In the United States, the Defense Logistics Agency (DLA) is the controlling agency and has issued specifications that govern the quality conformance testing sequence performed on semiconductor devices and hybrid modules, namely MIL-PRF-19500/MIL-STD-750, MIL-PRF-38534/MIL-STD-883 and MIL-PRF-38535/MIL-STD-883.

MIL-PRF-19500/MIL-STD-750 are the controlling specifications for discrete semiconductors such as diodes and power MOSFETs. MIL-PRF-19500 directs discrete semiconductors to be manufactured to either JAN, JANTX, JANTXV, or JANS levels (Note: the JAN level is not allowed for MOSFETs).

International Rectifier HiRel Products Group manufactures and tests hermetic products to one of three distinct quality conformance levels: (1) commercial hermetic, (2) source control drawing (SCD), or (3) MIL-PRF-38534, MIL-PRF-38535 qualified.

Dd for mac. Screening and Quality Conformance Inspection Requirements

QPL Listing - Discretes

Glossary

Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications.

Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products.

Level S: Class level S defines the screening requirements for high reliability space applications as specified in MIL-STD-883 and is intended for use in class K products.

JAN: JAN (Joint Army Navy) is the prefix assigned by the DLA to designate devices on the DLA qualified parts list.

JANTX: Military screening level as specified in MIL-PRF-19500 for a DLA qualified device.

JANTXV: Military with visual inspection screening level as specified in MIL-PRF-19500 for a DLA qualified device.

JANS: Space level screening as specified in MIL-PRF-19500 for a DLA qualified device.

Rad Hard MOSFETs

Discrete QPL Products

International
Single Event Effects Test Report
Product GroupDatePDF
IRUH3301 Series October 2010PDF
R7, 60V, N-Channel (Fab 2) September 2009PDF
R7, 60V, P-Channel (Fab 2) September 2009PDF
R6, 100V, N-Channel (Fab 2) September 2009PDF
R6, 150V, N-Channel (Fab 2) September 2009PDF
R6, 200V, N-Channel (Fab 2) September 2009PDF
R6, 250V, N-Channel (Fab 2) September 2009PDF
R5, 30V, N-Channel (Fab 2) September 2009PDF
R5, 30V, P-Channel (Fab 2) September 2009PDF
R5, 60V, N-Channel (Fab 2) September 2009PDF
R5, 60V, P-Channel (Fab 2) September 2009PDF
R5, 100V, N-Channel (Fab 2) September 2009PDF
R5, 130V, N-Channel (Fab 2) September 2009PDF
R5, 200V, N-Channel (Fab 2) September 2009PDF
R5, 200V, P-Channel (Fab 2) September 2009PDF
R5, 250V, N-Channel (Fab 2) September 2009PDF
RDHA701FP10A8QK June 2009PDF
R6, 600V, N-Channel March 2006PDF
IRUH33PA13B20K December 2005PDF
IRUH33P253B1M December 2005PDF
S Series July 2003PDF
Logic-Gate R7, 60V, N-Channel
R6, 100V N-Channel
R5 130V, N-Channel, SEE Process, Depletion
May 2003PDF
Logic Gate R7, 60V, P-Channel
R5, 60V, P-Channel
November 2002PDF
G4, 550V, N-Channel, SEE Process June 2001PDF
RIC7113 January 2000PDF
G4, 30V, N-Channel
G4, 100V, N-Channel
G4, 60V, P-Channel
G4, 100V, P-Channel
G4, 200V, P-Channel
G4, 400V, N-Channel, SEE Process
June 1998PDF
G4, 30V, N-Channel
G4, 200V, N-Channel
G4, 200V, N-Channel, SEE Process
G4, 250V, N-Channel, SEE Process
G4, 400V, N-Channel, SEE Process
G4, 500V, N-Channel, SEE Process
February 1998PDF
Total Ionizing Dose Test Report
Product GroupPDF
IRUH3301*PDF
IRUH3301* (ELDRS Test Report)PDF
IRUH33PA13B20KPDF
IRUH33PA13B20K (ELDRS Test Report)PDF
IRUH33P253B1MPDF
IRUH33P253B1M (Low Dose Report)PDF
RDHA701CD10A2NKPDF
RDHA701FP10A8CKPDF
RDHA701FP10A8QKPDF
RDHA710FR10A1NKPDF
RDHA710SE10A2QKPDF
RIC7113PDF
Prompt Dose Results
Product GroupPDF
IRHNA57064PDF
IRHNJ57130PDF
Neutron Testing Results
Product GroupPDF
IRUH3301*PDF
IRH7250PDF
IRH57260PDF
IRH67260PDF
IRUH33P253B1MPDF
IRUH33PA13B20KPDF
RDHA701CD10A2NKPDF
RDHA701FP10A8QKPDF
RDHA710FR10A1NKPDF
RDHA710SE10A2FPDF
RDHA710SE10A2SPDF
More Reports
Product GroupReport NamePDF
ART2800 TID, SEE and Neutron ReportPDF
R5 MOSFET Proton Test ReportPDF
RDHA710SE10A2QK Proton Test ReportPDF